Develop, qualify, and optimize wafer fabrication processes for Insulated Gate Bipolar Transistor (IGBT) technologies to support high-reliability power semiconductor applications in industrial and energy systems.
Establish and improve process flows, materials, and methodologies to meet product performance, quality, and cost targets in line with Fuji Electric manufacturing standards.
Demonstrate strong support of wafer process integration, including key modules such as oxidation, lithography, ion implantation, diffusion, etching, thin film deposition, and metallization, with focus on IGBT device characteristics.
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